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| inchange semiconductor product specification silicon npn power transistors BU102 description ? ? with to-3 package ?v ceo(sus) =150v (min) applications ? designed for horizontal deflection output stage of ctv receivers pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 400 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 6 v i c collector current 7 a p c collectorl power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU102 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 150 v v (br)ebo emitter-base breakdown votage i e =1ma; i c =0 6 v v (br)cbo collector-base breakdown votage i c =1ma; i e =0 400 v v cesat collector-emitter saturation voltage i c =5 a;i b =1.0 a 2.0 v v besat base-emitter saturation voltage i c =5 a;i b =1.0 a 2.5 v i cbo collector cut-off current v cb =400v; i e =0 0.1 ma i ceo collector cut-off current v ce =100v; i e =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe dc current gain i c =1a ; v ce =5v 30 120 inchange semiconductor product specification 3 silicon npn power transistors BU102 package outline fig.2 outline dimensions |
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